050-7056 rev c 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak apt8043bll apt8043sll 800v 20a 0.430 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 5a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 800 0.43 100500 100 35 apt8043bll_sll 800 2080 3040 403 3.23 -55 to 150 300 2030 1300 bll sll downloaded from: http:///
050-7056 rev c 7-2004 dynamic characteristics apt8043bll_sll characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -20 a ) reverse recovery time (i s = -20 a , dl s /dt = 100a/s) reverse recovery charge (i s = -20 a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 2080 1.3 680 10.6 10 symbol r jc r ja min typ max 0.31 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 2500 485 8085 13 55 95 25 5 280125 460 160 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 20a @ 25c resistive switching v gs = 15v v dd = 400v i d = 20a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 533v, v gs = 15v i d = 20a, r g = 5 ? inductive switching @ 125c v dd = 533v, v gs = 15v i d = 20a, r g = 5 ? 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 6.50mh, r g = 25 ? , peak i l = 20a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 20a di / dt 700a/s v r 800 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
typical performance curves apt8043bll_sll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 02 46 81 0 051 01 52 02 53 03 54 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 2018 16 14 12 10 86 4 2 0 2.52.0 1.5 1.0 0.5 0.0 5040 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 5.5v 6v 6.5v 7v 7.5v v gs =15 &10 v 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, lo w voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.02580.107 0.177 0.00295f0.0114f 0.174f power (watts) junctiontemp. ( c) rc model case temperature. ( c) normalized to v gs = 10v @ i d = 5a i d = 5a v gs = 10v 050-7056 rev c 7-2004 downloaded from: http:///
i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance e on e off v dd = 533v i d = 20a t j = 125c l = 100h e on includes diode reverse recovery. e on e off v dd = 533v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. apt8043bll_sll v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 8050 10 1 1612 84 0 10,000 5,0001,000 500100 10 200100 10 1 t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 5 ? t j = 125c l = 100h t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5 1 01 52 02 53 03 5 051 01 52 02 53 03 54 04 55 0 t d(on) t d(off) 6050 40 30 20 10 0 1000 800600 400 200 0 v dd = 533v r g = 5 ? t j = 125c l = 100h 4540 35 30 25 20 15 10 50 12001000 800600 400 200 0 i d = 20a v ds =400v v ds =160v v ds =640v t j =+150c t j =+25c 050-7056 rev c 7-2004 downloaded from: http:///
050-7056 rev c 7-2004 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. apt8043bll_sll figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt15df100 switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) t f 90% 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% downloaded from: http:///
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